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Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films
Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films
Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films
Lee, Y. M. (Autor:in) / Wu, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 4591-4598
01.01.2008
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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