Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Saitoh, H. (Autor:in) / Kimoto, T. (Autor:in) / Matsunami, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 997-1000
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes
British Library Online Contents | 2011
|British Library Online Contents | 2002
|British Library Online Contents | 2003
|Numerical analysis of gate leakage current in AlGaN Schottky diodes
British Library Online Contents | 2008
|Defect Related Leakage Current Components in SiC Schottky Barrier Diode
British Library Online Contents | 2012
|