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Observation of defects evolution in strained SiGe layers during strain relaxation
Observation of defects evolution in strained SiGe layers during strain relaxation
Observation of defects evolution in strained SiGe layers during strain relaxation
Jang, J. H. (Autor:in) / Phen, M. S. (Autor:in) / Siebein, K. (Autor:in) / Jones, K. S. (Autor:in) / Craciun, V. (Autor:in)
MATERIALS LETTERS ; 63 ; 289-291
01.01.2009
3 pages
Aufsatz (Zeitschrift)
Englisch
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