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Observation of defects evolution in strained SiGe layers during strain relaxation

Jang, J. H. / Phen, M. S. / Siebein, K. / Jones, K. S. / Craciun, V.

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Observation of defects evolution in strained SiGe layers during strain relaxation

Jang, J. H. / Phen, M. S. / Siebein, K. / Jones, K. S. / Craciun, V.

Observation of defects evolution in strained SiGe layers during strain relaxation

Jang, J. H. / Phen, M. S. / Siebein, K. / Jones, K. S. / Craciun, V.

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Check availability in my library

Order at Subito €

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Document information

Title:

Observation of defects evolution in strained SiGe layers during strain relaxation

Contributors:

Jang, J. H. (author) / Phen, M. S. (author) / Siebein, K. (author) / Jones, K. S. (author) / Craciun, V. (author)

Published in:

MATERIALS LETTERS ; 63 ; 289-291

Publication date:

2009-01-01

Size:

3 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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