Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition: Fid-Bau Portal

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

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Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

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Document information

Title:

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Contributors:

Luo, P. Q. (author) / Zhou, Z. B. (author) / Chan, K. Y. (author) / Tang, D. Y. (author) / Cui, R. Q. (author) / Dou, X. M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 2910-2915

Publication date:

2008-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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