Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. et al. | British Library Online Contents | 2010

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Emtsev, V. V. / Kozlovskii, V. V. / Misiuk, A. et al. | British Library Online Contents | 2009

Impact of CF~4 Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing

Sugimoto, T. / Satoh, M. / Nakamura, T. et al. | British Library Online Contents | 2010

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

Schmitt, H. / Haublein, V. / Bauer, A.J. et al. | British Library Online Contents | 2011

Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

Chen, B. / Tang, K. / Gu, S. et al. | British Library Online Contents | 2014