Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC: Fid-Bau Portal

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

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Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

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Titel:

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Beteiligte:

Weng, M.H. (Autor:in) / Roccaforte, F. (Autor:in) / Giannazzo, F. (Autor:in) / Di Franco, S. (Autor:in) / Bongiorno, C. (Autor:in) / Saggio, M. (Autor:in) / Raineri, V. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Erschienen in:

Silicon Carbide and Related Materials 2009 ; 713-716

MATERIALS SCIENCE FORUM ; 645/648

Erscheinungsdatum:

01.01.2010

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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