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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Soloviev, S. (Autor:in) / Matocha, K. (Autor:in) / Dunne, G. (Autor:in) / Stum, Z. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 775-778
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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