The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

Harada, S. / Namikawa, Y. | British Library Online Contents | 2007

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Hasegawa, J. / Konishi, K. / Nakamura, Y. et al. | British Library Online Contents | 2014

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

Hatakeyama, T. / Shinohe, T. | British Library Online Contents | 2002

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Hatakeyama, T. / Kushibe, M. / Watanabe, T. et al. | British Library Online Contents | 2003

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Song, H.K. / Lee, J.H. / Oh, M.S. et al. | British Library Online Contents | 2009