Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode: Fid-Bau Portal

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Harada, S. / Namikawa, Y. / Sugie, R.

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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Harada, S. / Namikawa, Y. / Sugie, R.

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Harada, S. / Namikawa, Y. / Sugie, R.

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Check availability in my library

Order at Subito €

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Document information

Title:

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Contributors:

Harada, S. (author) / Namikawa, Y. (author) / Sugie, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 963-966

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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