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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode
Harada, S. (author) / Namikawa, Y. (author) / Sugie, R. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 963-966
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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