Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis
Kitou, Y. (Autor:in) / Makino, E. (Autor:in) / Inaba, K. (Autor:in) / Hosokawa, N. (Autor:in) / Hiramatsu, H. (Autor:in) / Hasegawa, J. (Autor:in) / Onda, S. (Autor:in) / Tsuboi, H. (Autor:in) / Takaba, H. (Autor:in) / Miyamoto, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 47-50
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
SiC HTCVD Simulation Modified by Sublimation Etching
British Library Online Contents | 2006
|British Library Online Contents | 2004
|HTCVD Grown Semi-Insulating SiC Substrates
British Library Online Contents | 2003
|Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
British Library Online Contents | 2009
|Observation of Vacancy Clusters in HTCVD Grown SiC
British Library Online Contents | 2005
|