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Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
Makarov, Y.N. (Autor:in) / Talalaev, R.A. (Autor:in) / Vorob ev, A.N. (Autor:in) / Ramm, M.S. (Autor:in) / Bogdanov, M.V. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 51-54
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2004
|HTCVD Grown Semi-Insulating SiC Substrates
British Library Online Contents | 2003
|SiC HTCVD Simulation Modified by Sublimation Etching
British Library Online Contents | 2006
|Observation of Vacancy Clusters in HTCVD Grown SiC
British Library Online Contents | 2005
|Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
British Library Online Contents | 2003
|