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Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Ito, M. (author) / Storasta, L. (author) / Tsuchida, H. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 111-114
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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