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Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVD
Shrivastava, A. (Autor:in) / Muzykov, P. (Autor:in) / Pearman, B. (Autor:in) / Angel, S.M. (Autor:in) / Sudarshan, T.S. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 139-142
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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