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Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) Substrates
Aigo, T. (Autor:in) / Itoh, W. (Autor:in) / Fujimoto, T. (Autor:in) / Yano, T. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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