Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
Chung, G.Y. (Autor:in) / Loboda, M.J. (Autor:in) / Marinella, M.J. (Autor:in) / Schroder, D.K. (Autor:in) / Klein, P.B. (Autor:in) / Isaacs-Smith, T. (Autor:in) / Williams, J.W. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 485-488
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
British Library Online Contents | 2009
|Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
British Library Online Contents | 2009
|Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
British Library Online Contents | 2012
|Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers
British Library Online Contents | 1996
|Carrier Lifetime Analysis by Microwave Photoconductive Decay (mu-PCD) for 4H SiC Epitaxial Wafers
British Library Online Contents | 2007
|