Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
Bergman, J.P. (Autor:in) / Booker, I.D. (Autor:in) / Lilja, L. (Autor:in) / Hassan, J. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 289-292
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
|Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
British Library Online Contents | 2009
|Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
British Library Online Contents | 2009
|Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical Rotation
British Library Online Contents | 2002
|Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
British Library Online Contents | 2013
|