Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
Chung, G.Y. (Autor:in) / Loboda, M.J. (Autor:in) / Marninella, M.J. (Autor:in) / Schroder, D.K. (Autor:in) / Isaacs-Smith, T. (Autor:in) / Williams, J.R. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 283-286
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
British Library Online Contents | 2009
|Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
British Library Online Contents | 2009
|Carrier Lifetime Analysis by Microwave Photoconductive Decay (mu-PCD) for 4H SiC Epitaxial Wafers
British Library Online Contents | 2007
|Minority carrier lifetime and metallic-impurity mapping in silicon wafers
British Library Online Contents | 2001
|Mapping of minority carrier lifetime and mobility in imperfect silicon wafers
British Library Online Contents | 2003
|