Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices
Snook, M. (Autor:in) / McNutt, T. (Autor:in) / Kirby, C. (Autor:in) / Hearne, H. (Autor:in) / Veliadis, V. (Autor:in) / Nechay, B. (Autor:in) / Woodruff, S. (Autor:in) / Howell, R.S. (Autor:in) / White, J. (Autor:in) / Davis, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 977-980
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
British Library Online Contents | 2013
|High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
British Library Online Contents | 2007
|British Library Online Contents | 2014
|Grayscale Junction Termination for High-Voltage SiC Devices
British Library Online Contents | 2009
|High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
British Library Online Contents | 2011
|