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EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
Ohyanagi, T. (Autor:in) / Bin, C. (Autor:in) / Sekiguchi, T. (Autor:in) / Yamaguchi, H. (Autor:in) / Matsuhata, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 707-710
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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