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Effect of Oxidant in MOCVD-Growth of Al~2O~3 Gate Insulator on 4H-SiC MOSFET Properties
Effect of Oxidant in MOCVD-Growth of Al~2O~3 Gate Insulator on 4H-SiC MOSFET Properties
Effect of Oxidant in MOCVD-Growth of Al~2O~3 Gate Insulator on 4H-SiC MOSFET Properties
Moriya, H. (Autor:in) / Hino, S. (Autor:in) / Miura, N. (Autor:in) / Oomori, T. (Autor:in) / Tokumitsu, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 777-780
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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