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Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
MATERIALS SCIENCE FORUM ; 615/617 ; 793-796
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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