Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face: Fid-Bau Portal

Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Okuno, E. / Endo, T. / Sakakibara, T. / Onda, S. / Itoh, M. / Uda, T.

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Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Okuno, E. / Endo, T. / Sakakibara, T. / Onda, S. / Itoh, M. / Uda, T.

Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Okuno, E. / Endo, T. / Sakakibara, T. / Onda, S. / Itoh, M. / Uda, T.

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Check availability in my library

Order at Subito €

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Title:

Ab Initio Calculations of SiO~2/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face

Contributors:

Okuno, E. (author) / Endo, T. (author) / Sakakibara, T. (author) / Onda, S. (author) / Itoh, M. (author) / Uda, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 793-796

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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