Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. et al. | British Library Online Contents | 2005

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

Okamoto, M. / Tanaka, M. / Yatsuo, T. et al. | British Library Online Contents | 2006

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Gudjonsson, G. / Olafsson, H. O. / Allerstam, F. et al. | British Library Online Contents | 2005

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Allerstam, F. / Gudjonsson, G. / Olafsson, H. O. et al. | British Library Online Contents | 2005