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Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
Ghandi, R. (Autor:in) / Lee, H.S. (Autor:in) / Domeij, M. (Autor:in) / Buono, B. (Autor:in) / Zetterling, C.M. (Autor:in) / Ostling, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 833-836
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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