Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Grzegory, I. / Bockowski, M. / ucznik, B. et al. | British Library Online Contents | 2001

3C-SiC Growth on 6H-SiC (0001) Substrates

Matko, I. / Chenevier, B. / Audier, M. et al. | British Library Online Contents | 2002

Low-temperature (200degreeC) growth of diamond on nano-seeded substrates

Hiraki, A. | British Library Online Contents | 2000

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Tsuchida, H. / Miyanagi, T. / Kamata, I. et al. | British Library Online Contents | 2005

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Li, X. / Leone, S. / Andersson, S. et al. | British Library Online Contents | 2012