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High-dielectric constant AION prepared by RF gas-timing sputtering for high capacitance density
High-dielectric constant AION prepared by RF gas-timing sputtering for high capacitance density
High-dielectric constant AION prepared by RF gas-timing sputtering for high capacitance density
Poyai, A. (Autor:in) / Bunjongpru, W. (Autor:in) / Klunngien, N. (Autor:in) / Porntheerapat, S. (Autor:in) / Hruanan, C. (Autor:in) / Sopitpan, S. (Autor:in) / Nukeaw, J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 319-323
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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