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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Simoen, E. (Autor:in) / Brouwers, G. (Autor:in) / Eneman, G. (Autor:in) / Gonzalez, M.B. (Autor:in) / De Jaeger, B. (Autor:in) / Mitard, J. (Autor:in) / Brunco, D.P. (Autor:in) / Souriau, L. (Autor:in) / Cody, N. (Autor:in) / Thomas, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 364-367
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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