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Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping
Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping
Reducing the density of threading dislocations in GaAs epitaxial layers. Efficiency assessment of isovalent Bi doping and Pb doping
Baganov, Y. (Autor:in) / Krasnov, V. (Autor:in) / Lebed, O. (Autor:in) / Shutov, S. (Autor:in)
MATERIALS SCIENCE -WROCLAW- ; 27 ; 355-364
01.01.2009
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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