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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Simoen, E. / Brouwers, G. / Eneman, G. / Gonzalez, M.B. / De Jaeger, B. / Mitard, J. / Brunco, D.P. / Souriau, L. / Cody, N. / Thomas, S.

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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Simoen, E. / Brouwers, G. / Eneman, G. / Gonzalez, M.B. / De Jaeger, B. / Mitard, J. / Brunco, D.P. / Souriau, L. / Cody, N. / Thomas, S.

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Simoen, E. / Brouwers, G. / Eneman, G. / Gonzalez, M.B. / De Jaeger, B. / Mitard, J. / Brunco, D.P. / Souriau, L. / Cody, N. / Thomas, S.

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Title:

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Contributors:

Simoen, E. (author) / Brouwers, G. (author) / Eneman, G. (author) / Gonzalez, M.B. (author) / De Jaeger, B. (author) / Mitard, J. (author) / Brunco, D.P. (author) / Souriau, L. (author) / Cody, N. (author) / Thomas, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 364-367

Publication date:

2008-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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