Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium
Abermann, S. (Autor:in) / Henkel, C. (Autor:in) / Bethge, O. (Autor:in) / Pozzovivo, G. (Autor:in) / Klang, P. (Autor:in) / Bertagnolli, E. (Autor:in)
APPLIED SURFACE SCIENCE ; 256 ; 5031-5034
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Phase stabilization and structural studies of nanocrystalline La2O3-ZrO2
British Library Online Contents | 2005
|Sol-gel ZrO2 and ZrO2-Al2O3 nanocrystalline thin films on Si as high-k dielectrics
British Library Online Contents | 2009
|Thermally stable Ag@ZrO2 core-shell via atomic layer deposition
British Library Online Contents | 2017
|Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate
British Library Online Contents | 2011
|Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics
British Library Online Contents | 2016
|