A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
Lee, K.Y. (author) / Lee, S.Y. (author) / Huang, C.F. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 2005
Modelling of layer epitaxial growth: surface morphology and growth mode transitions
| British Library Online Contents | 2005
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
| British Library Online Contents | 2006
Short-Length Step Morphology on 4^o Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate
| British Library Online Contents | 2010
Phase-Field Simulation of Surface Morphology Evolution during Epitaxial Growth of SiGe/Si System
| British Library Online Contents | 2007