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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
Beshkova, M. (Autor:in) / Lorenzzi, J. (Autor:in) / Jegenyes, N. (Autor:in) / Birch, J. (Autor:in) / Syvajarvi, M. (Autor:in) / Ferro, G. (Autor:in) / Yakimova, R. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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