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    Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

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    Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

    New search for: Beshkova, M.
    New search for: Lorenzzi, J.
    New search for: Jegenyes, N.
    New search for: Birch, J.
    New search for: Syvajarvi, M.
    New search for: Ferro, G.
    New search for: Yakimova, R.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

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    Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

    New search for: Beshkova, M.
    New search for: Lorenzzi, J.
    New search for: Jegenyes, N.
    New search for: Birch, J.
    New search for: Syvajarvi, M.
    New search for: Ferro, G.
    New search for: Yakimova, R.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

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    Check availability in my library
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    Access

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    Document information
    Title:

    Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

    Contributors:

    Beshkova, M. (author) / Lorenzzi, J. (author) / Jegenyes, N. (author) / Birch, J. (author) / Syvajarvi, M. (author) / Ferro, G. (author) / Yakimova, R. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

    Published in:

    Silicon Carbide and Related Materials 2009 ; 183-186

    MATERIALS SCIENCE FORUM ; 645/648

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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