Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Chung, G.Y. (Autor:in) / Loboda, M.J. (Autor:in) / Sundaresan, S.G. (Autor:in) / Singh, R. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes
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Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
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Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
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Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
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