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Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC
Neudeck, P.G. (Autor:in) / Krasowski, M.J. (Autor:in) / Chen, L.Y. (Autor:in) / Prokop, N.F. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
Silicon Carbide and Related Materials 2009 ; 1135-1138
MATERIALS SCIENCE FORUM ; 645/648
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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