Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC

Neudeck, P.G. / Krasowski, M.J. / Chen, L.Y. / Prokop, N.F.

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Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC

Neudeck, P.G. / Krasowski, M.J. / Chen, L.Y. / Prokop, N.F.

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC

Neudeck, P.G. / Krasowski, M.J. / Chen, L.Y. / Prokop, N.F.

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Title:

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from - 150 ^oC to +500 ^oC

Contributors:

Neudeck, P.G. (author) / Krasowski, M.J. (author) / Chen, L.Y. (author) / Prokop, N.F. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

Published in:

Silicon Carbide and Related Materials 2009 ; 1135-1138

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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