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The temperature dependent analysis of Au/TiO"2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics
The temperature dependent analysis of Au/TiO"2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics
The temperature dependent analysis of Au/TiO"2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics
Kinaci, B. (Autor:in) / Sebnem Cetin, S. (Autor:in) / Bengi, A. (Autor:in) / Ozcelik, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 531-535
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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