Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

Kwasnicki, P. / Jokubavicius, V. / Sun, J.W. et al. | British Library Online Contents | 2014

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

Isshiki, T. / Nakamura, M. / Nishiguchi, T. et al. | British Library Online Contents | 2005

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Pressel, K. / Nilsson, S. / Wetzel, C. et al. | British Library Online Contents | 1996

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Hassan, J. / Bergman, J. P. / Henry, A. et al. | British Library Online Contents | 2007

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

Severino, A. / Anzalone, R. / Bongiorno, C. et al. | British Library Online Contents | 2010