Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
APPLIED SURFACE SCIENCE ; 257 ; 2700-2706
01.01.2011
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Black germanium produced by inductively coupled plasma etching
British Library Online Contents | 2013
|Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer
British Library Online Contents | 2015
|Reactive ion etching of FePt using inductively coupled plasma
British Library Online Contents | 2008
|Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer
British Library Online Contents | 2015
|Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer
British Library Online Contents | 2015
|