Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Kao, C. C. / Huang, H. W. / Tsai, J. Y. et al. | British Library Online Contents | 2004

Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures

Kang, D. J. / Kim, I. S. / Moon, J. H. et al. | British Library Online Contents | 2008

Black germanium produced by inductively coupled plasma etching

Schicho, S. / Jaouad, A. / Sellmer, C. et al. | British Library Online Contents | 2013

Inductively coupled plasma etching of GaN using Cl2/He gases

Lin, Y. C. / Chang, S. J. / Su, Y. K. et al. | British Library Online Contents | 2003

Characteristics of germanium dry etching using inductively coupled SF"6 plasma

Shim, K. H. / Kil, Y. H. / Yang, H. D. et al. | British Library Online Contents | 2012