Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Hussein, A. S. (Autor:in) / Hassan, Z. (Autor:in) / Thahab, S. M. (Autor:in) / Ng, S. S. (Autor:in) / Hassan, H. A. (Autor:in) / Chin, C. W. (Autor:in)
APPLIED SURFACE SCIENCE ; 257 ; 4159-4164
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Structural and magnetic properties of Mn:TiO2 films grown by plasma-assisted molecular beam epitaxy
British Library Online Contents | 2012
|British Library Online Contents | 2002
|Optical properties of GaSb-AlSb heterostructures grown by molecular beam epitaxy
British Library Online Contents | 1993
|Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy
British Library Online Contents | 2002
|Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties
British Library Online Contents | 2001
|