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New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
Katsuno, T. (Autor:in) / Watanabe, Y. (Autor:in) / Fujiwara, H. (Autor:in) / Konishi, M. (Autor:in) / Yamamoto, T. (Autor:in) / Endo, T. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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