New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching: Fid-Bau Portal

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Katsuno, T. / Watanabe, Y. / Fujiwara, H. / Konishi, M. / Yamamoto, T. / Endo, T.

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New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Katsuno, T. / Watanabe, Y. / Fujiwara, H. / Konishi, M. / Yamamoto, T. / Endo, T.

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Katsuno, T. / Watanabe, Y. / Fujiwara, H. / Konishi, M. / Yamamoto, T. / Endo, T.

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Title:

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Contributors:

Katsuno, T. (author) / Watanabe, Y. (author) / Fujiwara, H. (author) / Konishi, M. (author) / Yamamoto, T. (author) / Endo, T. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 298-301

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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