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Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography

Son, J. Y. / Shin, Y. S. / Shin, Y. H.

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Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography

Son, J. Y. / Shin, Y. S. / Shin, Y. H.

Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography

Son, J. Y. / Shin, Y. S. / Shin, Y. H.

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Document information

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Document information

Title:

Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography

Contributors:

Son, J. Y. (author) / Shin, Y. S. (author) / Shin, Y. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 9885-9887

Publication date:

2011-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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