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Material selection methodology for gate dielectric material in metal-oxide-semiconductor devices
Material selection methodology for gate dielectric material in metal-oxide-semiconductor devices
Material selection methodology for gate dielectric material in metal-oxide-semiconductor devices
Aditya, B.N. (Autor:in) / Gupta, N. (Autor:in) / Blundell, M. / Jerrams, S. / Edwards, K.L.
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.0042
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GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers
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