Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Ushio, S. (Autor:in) / Nakanishi, K. (Autor:in) / Ohtani, N. (Autor:in) / Kaneko, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 577-580
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2012
|An Anisotropic Etching Effect in the Graphene Basal Plane
British Library Online Contents | 2010
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
British Library Online Contents | 2005
|British Library Online Contents | 2002
|British Library Online Contents | 1998
|