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Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
Ushio, S. ( author ) / Nakanishi, K. ( author ) / Ohtani, N. ( author ) / Kaneko, T. ( author )
MATERIALS SCIENCE FORUM ; 717/720 ; 577-580
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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