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Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
Okamoto, M. (Autor:in) / Iijima, M. (Autor:in) / Nagano, T. (Autor:in) / Fukuda, K. (Autor:in) / Okumura, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 781-784
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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