Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition: Fid-Bau Portal

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Ji, S.Y. / Kojima, K. / Ishida, Y. / Tsuchida, H. / Yoshida, S. / Okumura, H.

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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Ji, S.Y. / Kojima, K. / Ishida, Y. / Tsuchida, H. / Yoshida, S. / Okumura, H.

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Ji, S.Y. / Kojima, K. / Ishida, Y. / Tsuchida, H. / Yoshida, S. / Okumura, H.

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Titel:

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Beteiligte:

Ji, S.Y. (Autor:in) / Kojima, K. (Autor:in) / Ishida, Y. (Autor:in) / Tsuchida, H. (Autor:in) / Yoshida, S. (Autor:in) / Okumura, H. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Erschienen in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 181-184

MATERIALS SCIENCE FORUM ; 740/742

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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